Shanghai, China - On March 20, 2024, the semiconductor industry event SEMICON China 2024 kicked off. German high-end semiconductor equipment manufacturer PVA TePla Group once again made its debut and showcased its latest domestically produced silicon carbide crystal growth equipment "SiCN" to the industry. This equipment is specially customized for the Chinese market and combines the production characteristics of the semiconductor industry. It combines Germany's design experience and concepts with China's local production capabilities to produce silicon carbide crystals using the PVT method (physical vapor transfer process). It is planned to be put into the market in the second quarter of 2024.

　　PVA TePla亮相SEMICONChina2024

As the first domestically produced silicon carbide crystal growth equipment created by PVA TePla in China, 'SiCN' aims to help us better meet localization needs, provide mature and stable process equipment for the Chinese market, and further assist partners in enhancing market competitiveness. "Xie Xiuhong, the head of the semiconductor business of PVA TePla Group in China, said," China has become an important base for the manufacturing of silicon carbide substrates in the global third-generation semiconductor industry chain. PVA TePla has accumulated rich experience in the design and manufacturing of crystal growth equipment, and will continue to be committed to strengthening the construction of localized supply chains, improving the technical service capabilities of local teams, and assisting the high-quality development of China's semiconductor industry in the future

Creating the first domestically produced silicon carbide crystal growth equipment

In China, the booming development of electric vehicles and many emerging industries brings broad opportunities for silicon carbide substrate materials. The production technology of silicon carbide semiconductor materials is becoming increasingly mature and stable, and has formed a considerable industrial scale. As one of the earliest companies to introduce silicon carbide crystal equipment into the Chinese market, PVA TePla Group in Germany has always been committed to integrating the cutting-edge technological advantages of China and Germany. SiCN combines China's localized procurement and production support capabilities with Germany's technological accumulation and inheritance. Through better reliability and consistent operation of equipment, it effectively improves the yield rate, reduces manufacturing costs, and achieves better efficiency, helping downstream customers effectively improve the added value and core competitiveness of final products.

　　PVA TePla Silicon Carbide Crystal Growth Equipment

·Customization: Specific crystal growth processes are often highly confidential for enterprises, and customized crystal growth platforms are crucial for verifying and optimizing their processes. PVA TePla can provide customers with professional customized solutions to meet the unique process and intellectual property needs of the industry, enabling seamless expansion for large-scale production.

·Flexibility: The design of "SiCN" can adopt and replace standard components and customized components from mature suppliers, ensuring that the equipment can use the latest research and development achievements and achieve continuous technological progress.

·Reliable production: The "SiCN" system is designed to be compact and highly automated, maximizing overall operational space savings while facilitating maintenance, enabling reliable large-scale production. Customers can also integrate other components such as feeding carts, multiple vacuum pump options, and measuring equipment to further enhance system functionality.

·High production efficiency: The crystal growth process requires long-term operation under high temperature conditions exceeding 2000 ° C, so excellent energy efficiency can achieve better cost-effectiveness. SiCN adopts a validated low-energy induction coil design to achieve high-efficiency induction heating, effectively reduce energy consumption, and optimize production costs.

The German PVA TePla Group has sold SiC crystal growth systems worldwide and collaborated with leading mainstream silicon carbide substrate material suppliers to develop and provide crystal growth equipment. The stability of the equipment and consistency in product quality have played a key role in the development of large-sized silicon carbide materials.

Establishing a Chinese supply chain and providing localized supporting services

At present, the German PVA TePla Group has established production bases, demonstration centers, and supply chain centers in China, aiming to localize high-end equipment to better assist the upgrading and development of China's semiconductor industry, especially in the production of silicon carbide crystals and large-sized monocrystalline silicon wafers. At the same time, in order to meet the needs of the local market, PVA TePla Group in Germany is further improving its local team's technical services, strengthening research and development cooperation with downstream partners, and providing more specialized and customized local support to help partners achieve large-scale production capacity more conveniently and quickly.

As China becomes an important production base for global silicon carbide, German PVA TePla Group will continue to deepen its presence in the Chinese market, strengthen its local production, supply, and supporting service capabilities, deepen local innovation and research and development cooperation, and assist in the high-quality development of China's semiconductor industry.